| 摘要 |
PURPOSE:To simplify the assembling process of a Darlington-transistor while freely selecting a parallel resistor by using a drawing diode as a separate chip regarding the structure of the transistor. CONSTITUTION:The Darlington-transistor is formed in such a manner that two NPN transistors Q1, Q2 consisting of P type bases 2, 2' and N type emitters 3, 3' are shaped to the main surface of an N type semiconductor substrate 1 while using the substrate as a common collector, the diode D1 obtained by forming a P-N junction 7 to another semiconductor chip is opposed to the transistors in the electrode surface, and the diode is Darlington-connected by solder electrodes 8, 8' while the drawing diode D1 is connected in parallel. According to this invension, a parasitic transistor phenomenon can be prevented by using the drawing diode D1 as a separate chip, and the reliability of operation is realized. |
