发明名称 Reversible memory structure with thermo-optical writing and optical reading and process for writing and erasing said structure
摘要 The invention relates to a reversible memory structure with thermo-optical inscription or writing and optical reading on a moving support. According to the invention, the memory structure deposited on a substrate (1) is constituted by a double layer (2 and 3). A second alloy layer (3) at ambient temperature in the martensitic phase is deposited on a first thermally deformable layer (2). A heat pulse creates a deformation in the first layer, which deforms the martensitic alloy layer. A more powerful heat pulse raises the alloy layer to a temperature above its transformation point from the martensitic phase to another crystallographic phase and erases the inscribed deformation. Particular application to optical disks.
申请公布号 US4371954(A) 申请公布日期 1983.02.01
申请号 US19810228990 申请日期 1981.01.27
申请人 THOMSON-CSF 发明人 CORNET, JEAN
分类号 B41M5/26;G11B7/24;G11B7/243;(IPC1-7):G11C13/04 主分类号 B41M5/26
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