| 摘要 |
<p>PURPOSE:To suppress electromigration by a method wherein a conductive lamination is constituted of conductive films, made of different metals, with the film thickness equal to the size of a crystal grain or less. CONSTITUTION:An insulating film 22 is provided with a multiplicity of selectively formed openings 26 and 27, and covers a semiconductor substrate 21. Conductive films are selectively formed spreading on the insulating film 22 and are electrically connected to the semiconductor substrate 21 via openings 26 and 27. The conductive films constitute a two layer lamination, sandwiching another layer 24 of a different metal, and are composed of crystals with their diameter not larger than as indicated by 28 and their thickness as indicated by 29. The boundaries of the crystals composing the conductive layers 23 and 25 being uniformly aligned in the direction of the thickness 29, electromigration of conductor atoms at the grain boundary can be kept extremely low.</p> |
