| 摘要 |
PURPOSE:To obtain an electrically stable passivation or insulating film by a method wherein annealing is performed for a porous thin film at high temperatures without producing temperature-caused effect detrimental to metal wiring films. CONSTITUTION:Circuit elements (NPN and PNP transistors) are built on the surface of a semiconductor substrate 11. A metal film 22 is formed of a low softening point metal to work as wiring between said circuit elements. a porous thin film 23 is formed on the surface of the substrate 11, containing the metal film 22, to work as a passivation or insulating film. The thin film 23 is then flooded with a laser beam for annealing. Regulation is effected with respect to the laser beam as to its heating depth-wise, and the thin film 23 is selected to be the only device component subjected to annealing. This setup prevents the film 22 from high temperature-caused adverse effects, resulting in the yield of a semiconductor device fine in structure and provided with a passivation or insulating film stable in its electrical characteristics. |
