| 摘要 |
PURPOSE:To form a single-crystal Si layer on an amorphous dielectric layer which is partially formed on, and made adhered to, an Si substrate by subjecting this dielectric layer-substrate to an atmoshpere of a hydrogen gas and an Si compound gas at high temperatures. CONSTITUTION:An Si oxide film 6 is formed on a one main surface of an Si substrate 5 through thermal oxidation, and by using photoetching the Si oxide film 6 is selectively removed to regularly expose the Si substrate 5. The exposed Si substrate 5 with the Si oxide film 6 is then subjected to an atmosphere of a hydrogen gas and an Si compound gas at high temperatures, forming a single- crystal Si layer 7 on the Si substrate 5 while a poly-crystal Si layer 3 on the Si oxide film 6. The poly-crystal layer 3 is then dissolved by the laser or electron beam radiation. Because single-crystallization proceeds in a lateral direction from the side wall facing the single-crystal Si layer 7, a single-crystallized Si 4 can be formed. |
