| 摘要 |
PURPOSE:To realize a high density, fine structure wiring by a method wherein precautions are taken so that the end face of a layer to be a conductive layer is formed into a gentle slope thereby preventing the formation of an overhang in an insulating film to be placed on said end face. CONSTITUTION:A first oxide film 42 is formed on a semiconductor substrate 41, whereon a first electrode forming film 44 is formed. The formation of a second oxide film 45 and an oxidation resisting film 47 follows. A part of the oxidation resisting film 47 is removed by etching and a part of the first electrode forming film 44 is oxidized for the formation of a third oxide film 48. A first electrode 49 is built after the removal of the remaining oxidation resisting film 47, the third oxide film 48 and the second oxide film 45. The first electrode 49 is then subjected to oxidation for the formation of a fourth oxide film 53, whereon a second electrode 56 is formed. The slope of the end face of the first electrode 49 being gentle, an overhang is not created in the oxide film located on the end face 51. |
