| 摘要 |
PURPOSE:To provide a reliable bonding of a first layer wiring and a second layer wiring by a method wherein the formation of the second layer Al wiring is performed in the same vacuum unit after the provision of a through hole in an interlayer insulating layer by dry etching. CONSTITUTION:An insulating layer 22 and then a first wiring layer 23 are provided on a semiconductor substrate 21. The formation follows of an interlayer insulating film 24, whereon an Si nitride film 25 is formed. The Si nitride film 25 works as a mask in an etching process wherein the masking film 25 itself as well as the layer substrate to be worked on are etched selectively. Next, the surface of the first wiring layer 23 is subjected to etching, which is followed by the provision of a second wiring layer 28. By this process, the cleaning of the surface of the Al composing the first wiring layer and the formation of the second wiring layer 28 composed of Al can be effected in succession in the same vacuum environment without ruining the vacuum, with the specimens therefore kept from exposure to atmosphere, which results in the exclusion of contamination. Accordingly, the bonding of the first and the second wirings can be performed with a high rate of yield. |
