| 摘要 |
PURPOSE:To improve the manufacturing yield of an image pickup device by alleviating a stress produced between an opaque material layer and the surface of a semiconductor substrate by the heat treating step performed after the formation of the opaque material layer and preventing the production of a crystalline defect produced on the surface of the substrate. CONSTITUTION:Projections 13a, 14a are respectively formed to slight inside of the slits between opaque aluminum layers 19 and 20 on a channel stopper 24 at polysilicon electrodes 13 and 14. With this structure, the sections of the slit ends of the layers 19, 20 become wavy. In this manner, a stress produced between the substrate 11 and the layers 19, 20 by the heat treating step of the aluminum sink can e largely alleviated, and no crystal defect is produced on the substrate 11 along the end of the slits formed by the layers 19, 20 even after the later dicing step. |
