发明名称 SUBSTRATE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To remove flashes without damaging the flatness of a W or Mo semiconductor substrate, by rounding off the angles of the substrate by barrel polishing. CONSTITUTION:Rough discs having a diameter of 12mm. and a thickness of 2mm. are put in a hexagonal stainless barrel vessel to about 1/3 of the capacity thereof, green carborundum (80 meshes) and a small quantity of barrel grindstones (having diameters of 5-10mm.) are put therein in an amount nearly equal to that of the Mo discs, water is added so that the content is about 3/4 of the capacity, and then processing is made for one hour at 70rpm. As the result, the angles of substrates are given smooth roundness (0.5-1R) throughout the entire peripheries of both front and back surfaces thereof, and thereby excellent substrates having the surface roughness of about 10mu at maximum and the parallelism of 10-20mum are prepared. Thus, the semiconductor substrates which are highly excellent in intimate adhesion can be obtained.
申请公布号 JPS5814543(A) 申请公布日期 1983.01.27
申请号 JP19810112108 申请日期 1981.07.20
申请人 TOKYO SHIBAURA DENKI KK 发明人 FUKUHARA YOSHIO;TADA SHIYUN;KOIZUMI HIDEO
分类号 H01L21/52;H01L21/48 主分类号 H01L21/52
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