摘要 |
PURPOSE:To remove flashes without damaging the flatness of a W or Mo semiconductor substrate, by rounding off the angles of the substrate by barrel polishing. CONSTITUTION:Rough discs having a diameter of 12mm. and a thickness of 2mm. are put in a hexagonal stainless barrel vessel to about 1/3 of the capacity thereof, green carborundum (80 meshes) and a small quantity of barrel grindstones (having diameters of 5-10mm.) are put therein in an amount nearly equal to that of the Mo discs, water is added so that the content is about 3/4 of the capacity, and then processing is made for one hour at 70rpm. As the result, the angles of substrates are given smooth roundness (0.5-1R) throughout the entire peripheries of both front and back surfaces thereof, and thereby excellent substrates having the surface roughness of about 10mu at maximum and the parallelism of 10-20mum are prepared. Thus, the semiconductor substrates which are highly excellent in intimate adhesion can be obtained. |