| 摘要 |
PURPOSE:To increase the degree of freedom in circuit designing by a method wherein a two separately located conductive paths are connected by means of impurity doped single crystal or polycrystalline Si and a circuit thus formed can be opened by fusing, and then closed by conducting in a semiconductor device conductive part. CONSTITUTION:On a P type Si substrate 102 coated with an SiO2 film 101 formed on its surface in an conventional diffusion process, two separate circuit wiring conductors 103 and 104 arer formed, made of Al, polycrystalline Si, Mo, or the like. Next, the entire surface including these is covered with an SiO2 insulating and protecting film 105 containing a small quantity of P, which in turn is subjected to a selective etching process wherein the ends facing each other of the conductors 103 and 104 are exposed. After this, a high resistance wiring conductor 106 made of single crystal or polycrystalline Si is attached, covering the exposed film 101, the ends of the conductors 103 and 104, and the end of the remaining film 105. The conductor 106 is then implanted with ions and changed into a low resistance connecting conductors. This facilitates later disconnecting and re-connecting of the conductors 103 and 104 ny means of fusing and re-fusing. |
