| 摘要 |
PURPOSE:To obtain a densely integrated, high performance semiconductor device by a method wherein a lamination of a polycrystalline Si layer and a Pt layer is applied to coat electrodes to realize electrodes capped with Pt silicide after heat treatment, in a process of forming electrode layers on a source and drain regions, and a gate electrode built on a semiconductor substrate. CONSTITUTION:An element isolating dielectric thick layer 3 is formed on a P<+> type channel cut layer 2 in the periphery of a P type semiconductor substrate 1, and the part of the substrate 1 surrounded with the layer 3 is coated with a thin gate oxide film 4. Next, at the middle of the film 4, a gate electrode is built consisting of an N<+> type polycrystalline Si layer 5, an Si3N4 film 601, and an SiO2 film 7. The film 4 located on the both sides of the gate electrode is removed and an N type source region 12 and drain region 13 are formed by diffusion. After this, a coating of an N type polycrystalline Si layer 9 is formed and covers the ends of the gate electrode and the layer 3, which in turn is covered with an Si3N4 film 602. The entire surface is then covered with a Pt layer 10 and is subjected to heat treatment for the formation of a Pt silicide layer 11 on the Si layers 5 and 9 to work as respective electrode layers. |
