METHOD FOR PRODUCING A PASSIVATING LAYER ON A SILICON SEMICONDUCTOR BODY

摘要

In the present invention a process is provided for depositing a protective passivating film of doped or undoped amorphous silicon on a body of semiconductor material. In the process a body of semiconductor material is disposed within a reaction vessel, a silicon-hydrogen gaseous compound is fed into the reaction vessel and decomposed by means of a glow discharge. The decomposition of the silicon-hydrogen gas mixture results in the deposition of amorphous silicon on the semiconductor body.