Method of making a field effect transistor with a modified metal semiconductor Schottky barrier depletion region.

摘要

In a MESFET (Metal Semiconductor Field Effect Transistor) type transistor the depth of the region depleted of electrons in the active layer of the transistor is increased under the gate by means of nitrogen ion bombardment of the substrate surface which is to be covered by the metallisation and furthermore the region depleted of electrons is decreased in the channels formed between the gate metallisation and the ohmic contacts by depositing on the surface of the active layer between the said channels a layer of Ga2O3.