| 摘要 |
PURPOSE:To obtain a photodiode array readily, by providing isolating layers reaching an insulating layer from the surface in one single crystal of a wafer in an SOI structure in which the insulating layer is held with single crystal layers, and providing a photodiode in each part. CONSTITUTION:O ions are implanted in an N-type single crystal Si substrate 1, to provide an SiO2 layer 1a. Thus an SOI constitution is provided. The thickness of a layer 1b is increased by epitaxial growing so that the yield of warping is prevented. P-type impurities are implanted into the layer 1b so as to reach the insulating layer la. Thus the layer 1b is isolated into a plurality of parts. P layers 3 and N layers 4 are formed in the isorated layers 1b, and photodiodes D1... are formed. The photodiodes are connected with Al wirings 5 to obtain an array. Light screening layers 7 are provided through protecting films 6. The yield of parasitic diodes at the interface between the isolating layers and the N layers 1b is prevented. In this constitution, the photodiode array characterized by no warping and no mutual interference is obtained few steps. |
