发明名称 Apparatus for chemical etching of silicon
摘要 Extremely cold gaseous nitrogen is used as a cooling medium in the highly exothermic reaction between a chemical etch solution and silicon. This greatly increases the throughput of silicon material through the etchant over prior art techniques, particularly where it is desired to maintain the temperature of the etchant solution below 25 DEG C.
申请公布号 US4370192(A) 申请公布日期 1983.01.25
申请号 US19800198567 申请日期 1980.10.20
申请人 AMERICAN MICROSYSTEMS, INC. 发明人 COOLEY, RICHARD F.
分类号 C23F1/08;F25D3/10;(IPC1-7):C23F1/02;F25B19/00;H01L21/30 主分类号 C23F1/08
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