| 发明名称 |
Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions |
| 摘要 |
A method of manufacturing a semiconductor device characterized in that after a fine groove has been formed in the surface of a semiconductor layer by dry etching, an insulating region is formed so as to fill up the fine groove.
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| 申请公布号 |
US4369565(A) |
申请公布日期 |
1983.01.25 |
| 申请号 |
US19800179983 |
申请日期 |
1980.08.21 |
| 申请人 |
HITACHI, LTD. |
发明人 |
MURAMATSU, AKIRA |
| 分类号 |
H01L21/31;H01L21/76;H01L21/763;H01L21/765;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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