Process for forming self-supporting semiconductor film

摘要

A process is provided for forming a self-supporting semiconductor film or ribbon. A TESS substrate is prepared from a substrate of refractory material having an expansion coefficient different from the expansion coefficient of the semiconductor material. A colloidal suspension of graphite is applied to the substrate to form a thin layer of loosely adherent graphite particles. Over this layer of graphite is deposited a layer of the semiconductor material, the deposition occurring at an elevated temperature. Upon cooling from the deposition temperature, the differential thermal expansion coefficience causes the shearing at the graphite layer and therefore provides for the easy removal of the semiconductor layer from the substrate.