发明名称 |
Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit |
摘要 |
A self-aligned polysilicon gate depletion-type n-channel IGFET serving as a load transistor in a mesa-type integrated circuit having a P+ field region surface. The gate is ring-shaped and surrounds the IGFET source region. The source region does not intersect a mesa edge. The gate overlaps mesa edges to reduce peripheral capacitance.
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申请公布号 |
US4370669(A) |
申请公布日期 |
1983.01.25 |
申请号 |
US19800169527 |
申请日期 |
1980.07.16 |
申请人 |
GENERAL MOTORS CORPORATION |
发明人 |
DONLEY, WILLIAM B. |
分类号 |
H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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