| 发明名称 |
Anisotropic etching of aluminum |
| 摘要 |
A method of anisotropic etching of aluminum or an alloy thereof comprising using as the etch gas a mixture of boron trichloride, trichloromethane and hydrogen. The etchant mixture advantageously also contains nitrogen and helium.
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| 申请公布号 |
US4370196(A) |
申请公布日期 |
1983.01.25 |
| 申请号 |
US19820362043 |
申请日期 |
1982.03.25 |
| 申请人 |
RCA CORPORATION |
发明人 |
VOSSEN, JR., JOHN L.;HALON, BERNARD |
| 分类号 |
C23F4/00;H01L21/3213;(IPC1-7):C23F1/02 |
主分类号 |
C23F4/00 |
| 代理机构 |
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