发明名称 |
Heat-treating method for semiconductor components |
摘要 |
An improved method for the heat treatment of quartz-glass tubes at temperatures above 1200 DEG C. is disclosed wherein a pressure is maintained within the glass tube which is 3 to 110 mm Hg higher than the pressure on the external surface of the quartz tube over the heated area of the tube for at least the length of time that a temperature of 1200 DEG C. is exceeded. The process is particularly useful for the treatment of quartz-glass tubes within which silicon wafers are disposed for the purpose of diffusing doping agent into silicon wafers or of depositing doped epitaxial layers on silicon wafers.
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申请公布号 |
US4370158(A) |
申请公布日期 |
1983.01.25 |
申请号 |
US19810225564 |
申请日期 |
1981.01.16 |
申请人 |
HERAEUS QUARZSCHMELZE GMBH |
发明人 |
SCHUELKE, KARL A. |
分类号 |
H01L21/205;C30B31/10;C30B31/18;H01L21/22;H01L21/324;(IPC1-7):C03B32/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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