发明名称 |
SELF CURRENT LIMITING CONTROL CIRCUITRY FOR GATED DIODE SWITCHES |
摘要 |
<p>A gated diode switch requires a voltage applied to the gate which is more positive than that of the anode and cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must flow into the gate of the switch to break current flow. The use of a second gated diode switch coupled by the cathode to the gate of a gated diode switch which is to be controlled provides a high voltage and current capability means for cutting off (interrupting) or inhibiting current flow through the gated diode switch. The state of a gated diode switch is thus controlled by a second gated diode switch. The state of the second gated diode switch is controlled by a circuitry consisting of an n-p-n transistor at least one p-n-p transistor, and at least one diode.</p> |
申请公布号 |
CA1140221(A) |
申请公布日期 |
1983.01.25 |
申请号 |
CA19790340798 |
申请日期 |
1979.11.28 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
SHACKLE, PETER W. |
分类号 |
H03K;H03K17/08;(IPC1-7):03K17/08 |
主分类号 |
H03K |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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