发明名称 SELF CURRENT LIMITING CONTROL CIRCUITRY FOR GATED DIODE SWITCHES
摘要 <p>A gated diode switch requires a voltage applied to the gate which is more positive than that of the anode and cathode in order to break current flow between the anode and cathode. In addition, a current of at least the same order of magnitude as flows between anode and cathode must flow into the gate of the switch to break current flow. The use of a second gated diode switch coupled by the cathode to the gate of a gated diode switch which is to be controlled provides a high voltage and current capability means for cutting off (interrupting) or inhibiting current flow through the gated diode switch. The state of a gated diode switch is thus controlled by a second gated diode switch. The state of the second gated diode switch is controlled by a circuitry consisting of an n-p-n transistor at least one p-n-p transistor, and at least one diode.</p>
申请公布号 CA1140221(A) 申请公布日期 1983.01.25
申请号 CA19790340798 申请日期 1979.11.28
申请人 WESTERN ELECTRIC COMPANY, INCORPORATED 发明人 SHACKLE, PETER W.
分类号 H03K;H03K17/08;(IPC1-7):03K17/08 主分类号 H03K
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