发明名称 MOS TRANSISTOR CIRCUIT
摘要 PURPOSE:To perform high-speed operation by supplying a driving stage with a power voltage higher than the power voltage of a final stage which has a capacitive load. CONSTITUTION:When an input signal is applied to a terminal 16, MOS transistors (TR) 12 and 13 turn on and an MOSTR 14 turns off. A capacitive load 15 is therefore driven at a power voltage VDD2. When the input signal is ceased, the TRs 12 and 13 turn off and a power voltage VDD1 higher than a power voltage VDD2 is applied to the gate of the TR14. Consequently, the TR14 turns on speedily to charge the capacitive load 15 abruptly.
申请公布号 JPS5813031(A) 申请公布日期 1983.01.25
申请号 JP19810112484 申请日期 1981.07.17
申请人 MATSUSHITA DENKI SANGYO KK 发明人 NAKAMURA TATSU
分类号 H03K17/687;H03K19/017 主分类号 H03K17/687
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