Metal-semiconductor thermal sensor

摘要

A metal-semiconductor variable resistance temperature or infrared energy measuring device is described, along with a method for making it. The device may be made as a thin film, and typically operates over the range of at least 1 degree K to 300 degrees K. The device typically has an approximately 1/T temperature dependence of resistance. In one embodiment, gold is used as the metal, and germanium the semiconductor. The metal subsists as metallic or intermetallic globules dispersed in a semiconductor matrix, and may be formed by heating a metastable metal-semiconductor alloy until the metal precipitates out as described.