发明名称 |
High performance dynamic sense amplifier with active loads |
摘要 |
A random access read/write MOS memory device consisting of an array of rows and columns of one-transistor memory cells employs a bistable sense amplifier circuit at the center of each column. The sense amplifier is of the dynamic type in that coupling transistors connect the column line halves to the cross-coupled driver transistors. The sources of the driver transistors are connected to ground through a sequentially timed, three step grounding arrangement employing two transistors, one having a dual channel implanted to provide two different threshold voltages. Active load devices connected to the column line halves provide pull-up of the voltage on the one-going column line half to a full Vdd level.
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申请公布号 |
US4370575(A) |
申请公布日期 |
1983.01.25 |
申请号 |
US19800196987 |
申请日期 |
1980.10.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCALEXANDER, III, JOSEPH C.;WHITE, JR., LIONEL S.;RAO, G. R. MOHAN |
分类号 |
G11C11/404;G11C11/4076;G11C11/4091;G11C11/4093;H01L27/108;H03K3/356;(IPC1-7):H03K5/24;G11C7/06 |
主分类号 |
G11C11/404 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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