| 摘要 |
PURPOSE:To obtain a semiconductor device permitting cross wiring with smaller monopolized area by a method wherein the space between the ohmic contacts of the first region is used as a high-resistivity resistance element and the space between the ohmic contacts of the second region is used as a low-resistivity resistance element in resistance elements for an integrated circuit. CONSTITUTION:The difference in a conventional pinch resistors is that the pinch resistor contacts with the second region 5 through contact windows 6'' for obtaining ohmic contact at the opposite ends of the second region 5 diffused an N type emitter impurity. No difference in the conventional pinch resistance are noted except the above. However, no new region is required for forming low resistance. The second region 5, contact windows 6'' for resistive contact and an emitter diffusion resistance by a wiring metal film 9 are formed on the pinch resistor to permit high integration. |
