| 摘要 |
PURPOSE:To improve the shape and the adhesion force to an insulating film of a single crystal semiconductor region, by coating the upper surface of a non-single crystal semiconductor region with an Si nitride film and irradiating by a flux of light in the manufacture of a semiconductor device of an SOI structure. CONSTITUTION:An Si dioxide film approx. 600nm thick 12 as an insulating film, an Si polycrystalline film 14 approx. 500nm thick to form the semiconductor region and an Si nitride film 15 approx. 180nm thick as coating film are successively formed on a substrate 11. The Si dioxide film 12 served as the insulating film can be formed by thermal oxidation method, when the substrate 11 is constituted of an Si. When the substrate 11 is constituted of a substance beside an Si, or even of an Si, the film can be formed of a mono silane (SiH4) by chemical evaporation method. The polycrystalline Si film 14 is formed by normal vapor growing method. Next, the coating film 15 and the polycrystalline Si film 14 are successively selective-removed by lithography method resulting in the formation of the semiconductor region isolated into an island shape. |
