| 摘要 |
PURPOSE:To ensure protection of a semiconductor diode laser by a method wherein a diode for protection is connected in series to the semiconductor diode laser, and the reverse withstand voltage of the series matter is enhanced. CONSTITUTION:The diode D1 being formed by making silicon, for example, as the material and having the sufficiently higher reverse directional withstand voltage than the diode laser D0 is connected to the diode laser in series and moreover in the direction of the same polarity. Moreover a diode D2 being formed making silicon, etc., as the material likewise and having the sufficiently lower forward directional voltage than the reverse withstand voltage of the diode series matter mentioned above is connected in parallel and moreover in the direction of reverse polarity to both the ends of the diode series matter DS formed by this way. By constituting the diode series matter DS connecting the diode D1 for protection to the diode laser D0 in series by this way, and by enhancing the reverse withstand voltage of the series matter mentioned above, break down is not generated, and accordingly the diode laser D0 is protected from destruction. |
