| 摘要 |
PURPOSE:To obtain a solidstate image pickup element which has high sensitivity, high resolution, and less false signals, by coupling an epitaxial layer with a signal charge area, and forming a conductive layer on the epitaxial layer. CONSTITUTION:A p type Si substrate 1 has a self-scanning function part and also includes a CVD oxidized film 15. A hole is bored over an n layer 11 as the signal charge storage part of an interline transfer type CCD. Then, the wafer including this element is placed in an epitaxial growth device to obtain the epitaxial growth of Si. Further, an electrode 22 with ohmic contact is formed in the epitaxial p-Si and a passivation film 12 is formed over the entire surface. Most of incident light is absorbed by said grown Si to collect electrons in the n area, and positive holes are led out through an electrode. Therefore, the rate that the incident light arrives at the p-Si side of the substrate is lowered, reducing blooming. |
