| 摘要 |
PURPOSE:To obtain a semiconductor laser using the InP/InGaAsP crystal material having long life and being operatable at a low threshold current wherein a current pinch layer having scanty distortion is provided, and distortion and defect to be generated in the crystal is reduced. CONSTITUTION:A photo resist film 10 is adhered on the (100) face of an N type InP substrate 1, a stripe window is opened, and etching is performed to form a groove 11 of 1mum depth. An In0.87Ga0.13As0.70P0.30 four dimentional grasp layer 12 of 1mum thickness is made to grow epitaxially from the surface of the InP substrate 1 outside of the groove 11 to flatten the groove part 11. Then Cd is diffused in the whole surface at 600 deg.C using a Cd3P2 source. At this time, by diffusing Cd from the bottom of the groove part 11 up to depth of 0.5mum, a diffusion layer of 1mum thickness, what is called the current pinch layer 13 is formed in the N type InP substrate 1 outside of the groove 11. A stripe type window is opened at the upper part on the position the same with the groove part 11, diffusion of Cd is performed, and electrodes 7, 8 are formed. |
