| 摘要 |
PURPOSE:To facilitate the manufacture of a charge transfer device abolishing the doping of impurities to a compound semiconductor by a method wherein the input/output part to generate and to discharge electric charge is provided by assembling a pair of comb-type electrodes respectively adjoining to both the ends of the transferring path of the charge transfer device. CONSTITUTION:A positive voltage is applied to a field plate FP to make the surface of a semiconductor directly under thereof as an accumulation layer, and electrons to act as the majority carriers are collected thereto. Negative voltages are applied to the first and the second input gates IG1, IG2 and an accumulation gate SG through terminals 23, 24, 22 to generate the depletion regions, namely the wells of electric potential directly under thereof, and electric charge Q is accumulated therein. Strong inversion layers are generated in the surfaces of the semiconductor directly under the field plate FP and the accumulation gate SG complicated in the comb-shape where the high negative voltage VSG is applied, and holes to act as the minority carriers are collected thereto. As a result, the tunnel effect is generated between the end parts of boundary of the field plate FP and the accumulation gate SG, and holes are implanted from the surface of semiconductor at the edge part of the field plate FP toward the surface of semiconductor at the edge part of the accumulation gate SG. |
