| 摘要 |
PURPOSE:To make the leaking current from a capacitor small by using a compound comprising silicon, tantalum, and oxygen or comprising silicon, tantalum, oxygen, and nitrogen as a dielectric layer constituting the capacitor in a dynamic RAM. CONSTITUTION:The capacitor is constituted by an N type source region 3 and an extracting electrode 8 which are arranged on the upper and bottom surfaces of the dielectric layer 7. As a material for said dielectric layer 7, the compound comprising silicon, tantalum, and the oxygen or the said compound to which nitrogen is further added is used. Since said material has permittivity of several times that of SiO2 which has been conventionally used, the capacitor can be made small and the leaking current is made small. The dielectric layer 7 is formed by using two targets comprising, e.g. SiO2 and Ta2O5 and flowing O2, NH3, or N2 in a reacting chamber of a sputtering apparatus. After the patterning of said dielectric layer 7 has been performed, Al wiring is applied, and a PSG film 9 is deposited. Thus the dynamic RAM is completed. |
