| 摘要 |
PURPOSE:To form an epitaxial layer having high quality by adopting the speed of temperature drop at two stages when InGaAsP is grown onto an InP substrate in a liquid phase. CONSTITUTION:When the N type InGaAsP layer 13 is grown onto the N<+> type InP substrate through an N<+> type InP buffer layer 12, the temperature of a solution for growth is dropped at the speed of 1 deg.C/min up to a temperature lower than the temperature of the saturated solution by 12-20 deg.C from the temperature of the saturated solution, the layer 13 is grown in the liquid phase at the speed of temperature drop of 0.5 deg.C/min or lower, and a P type InP layer 14 is grown. Accordingly, the flat epitaxial layer having the few change of composition and high quality can be obtained. |
