| 摘要 |
PURPOSE:To improve the heat radiation of an individual main diode and to increase current capacity by arranging a plurality of main diode regions and auxiliary diode regions which expedite the heat radiation in an Si substrate in a dispersed pattern. CONSTITUTION:The main diode region 1 comprises an anode electrode 7, a P<+> layer 4, an Ni layer 3, an N<+> layer 5, and a cathode electrode 8. The P<+>-Ni- N<+> junction area in the main diode region is smaller than the area of any electrode. Both main and auxiliary regions 1 and 2 are arranged into a plurality of dispersed positions within one sheet of an Si disk. The electrodes 7 and 8 short both regions and are fixed. The auxiliary diodes are so designed that their injection efficiency is lower than that of the main diodes. The forward current is not flowed and the heat radiation of the main diodes is assisted. In this constitution, the trade off with respect to the reverse recovering charge of the high speed power diode and the current is improved. |
