| 摘要 |
PURPOSE:To divide a semiconductor easily, and to improve reliability by forming an electrode, which penetrates a substrate and is drawn out to the back, by utilizing the mask of an inorganic insulating film. CONSTITUTION:The GaAs substrate 11, to the surface thereof an FET, etc. are formed, is bonded onto a glass substrate 13 by wax, etc. through-holes penetrating to the back are shaped through etching according to a predetermined pattern, and an Au-Ge electrode and an Au layer are laminated onto the back. An Si3N4 pattern 18 is formed through a lift-off method utilizing a photo-resist, the Au back electrode 19 is shaped through a plating method while using the Si3N4 pattern 18 as a mask, and the substrate is divided at the position of the Si3N4 pattern 18. Accordingly, division is facilitated, and the lowering of the reliability in the semiconductor element is prevented. |
