| 摘要 |
PURPOSE:In subjecting a semiconductor layer to liquid epitaxial growth on a base plate of a phosphorus-containing semiconductor, to obtain an extremely improved epitaxial growth layer, by exposing the base plate to phosphorus vapor and keeping it in it until immediately before the beginning of the growth. CONSTITUTION:A phosphorus-containing base plate such as the n type InP base plate 1 is put in the hollow 7 of the slide plate 6, and the InP covering crystal 2 is placed on it. While, the first solution 3 comprising In as a main component, GaAs, InAs, and InP and the second solution 4 obtained by bringing Zn and InP to contact with In are contained in the solution receiver 5. When the boat thus set is heated by a constant temperature furnace, phosphorus is evaporated from the InP covering crystal 2, and the base plate 1 is exposed to phosphorus vapor. The base plate 1 is cooled, brought into contact with the first solution 3 and the second solution 4 successively, so that a GaInP layer and a p type InP layer are grown successively. |
