发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To stick firmly, by bonding aluminum on the back of a semiconductor chip and Ni or Sn on the stem or frame surface, contacting face to face, and applying ultrasonic vibration to the chip. CONSTITUTION:A Ni-plated layer 4 on a stem or frame and an aluminum-evaporated layer are contacted face to face. A chip 2 is given ultrasonic vibration and sticked firmly. This method unnecessitate a heating process at high temperatures, gives no adverse influence on a semiconductor device and no oxidation on the stem or frame, and simplifies the device. Unnecessity of Au reduces the cost in production.</p>
申请公布号 JPS589328(A) 申请公布日期 1983.01.19
申请号 JP19810106497 申请日期 1981.07.08
申请人 TOKYO SHIBAURA DENKI KK 发明人 TATSUMI YOSHIAKI
分类号 H01L21/52;H01L21/58;(IPC1-7):01L21/58 主分类号 H01L21/52
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