| 摘要 |
<p>PURPOSE:To obtain a highly reliable nonvolatile semiconductor memory by decreasing stress of a transistor equivalent to a memory cell provided to generate comparison potential. CONSTITUTION:Transistors Tr17-20 are added to the power source Vc side of a comparison potential generating circuit 12 and a control potential generating circuit 13, and power down signals PD are supplied to their gates. The signal PD is also supplied to the gate of Tr1'. The signal PD acts as ''0'' and makes Tr17-Tr20 an off state at the time of power down and acts as ''1'' and makes them an on state during normal operation. By this constitution, it is possible not to give stress to a transistor M by stopping supply of current to the transistor M. Current consumption of the circuit 12 and circuit 13 can be reduced near to zero. Accordingly, a highly reliable nonvolatile semiconductor memory can be obtained.</p> |
