| 摘要 |
<p>PURPOSE:To reduce damage, contamination or residue of a colored layer and a substrate after etching and to obtain the good spectroscopic characterisitcs, by performing a dry etching under a specific gaseous mixture selected from the incineration gas and rare gas. CONSTITUTION:A vapor-deposited film 12 is formed on a substrate 11 by a vacuum deposition of a coloring material, and a resist film 13 is formed on the film 12 and a mask for etching 14 is prepared by pattern exposing and developing, and the part where the masks 14 are not placed is subjected to a dry etching under a gaseous mixture consisting of at least one kind of gas selected from the incineration gas and rare gas and at least one kind of gas selected from gaseous fluorine and gaseous chlorine. By this way, the speed of etching is increased and a bad influence caused by a temp. rise owing to an etching for a long time and a contamination caused by resticking are prevented, and a color filter element having the desired spectroscopic characteristics is obtained.</p> |
