| 摘要 |
PURPOSE:To obtain a two-level crossing electrode with higher integration and lower capacitance by forming an electrode pattern on a region which includes a region over a patterned organic matter obtained by the oxygen-ion etching of a lower organic matter layer through the use of a patterned resist as a mask. CONSTITUTION:A polyimide resin layer 5 is used to adherently cover Al electrodes 2-4 on a substrate 1, and accelerated oxygen ions are radiated to the entire surface with a resist mask 6 applied. This causes a patterned resin film 7 to be obtained. The entire surface is then adherently covered by a conducting film 8, and etched with a resist mask 9 applied, to form a conducting pattern 10. Then the resist and the polyimide resin are removed by an O2 plasma to form a space 11 at the two-level crossing portion. The etched speed of an organic matter film is far greater than that of an inorganic matter when subjected to the accelerated O ion radiation. Thus, a two-level crossing electrode having higher integration and lower electric capacitance can be obtained. |
