| 摘要 |
PURPOSE:To increase the response speed of a semiconductor device by suppressing the accumulation of minority carriers in a p type region by a method whereing ions of a halogen such as F are implanted in the p type semiconductor region where a p-n junction is provided. CONSTITUTION:An n<+> type layer 2 is diffusedly formed on the rear side of an n<-> type Si substrate 1 and subjected to wet oxidation in a steam containing atmosphere for the formation of an SiO2 film 4 and 4' respectively on the front and rear face of the substrate 1. Next, the collector forming film 4 on the front side of the substrate 1 is provided with an opening 5 for diffusion for a base. The remaining film 4 works as a mask in the implantation of F ions into the exposed front base of the substrate 1. After this, the entire surface is covered with a BSG film 6, subjected to heat treatment in N2 gas at 1,200 deg.C for the diffusion of B out of the film 6 for the formation of a p type base region 7. Next, an opening is provided in a prescribed region in the films 6 and 4. An n<+> type emitter region 9 is diffusedly formed in the region 7 penetrating the F doped region 8, and an n<+> type channel cut region 10 is diffusedly formed in the substrate 1. |
