发明名称 Gate turn-off thyristor stack.
摘要 <p>A GTO thyristor stack comprises a pair of GTO thyristors (31, 32; 41,42) in parallel connection and a pair of diodes (34, 35; 44, 45) in anti-parallel connection therewith. The elements in one of the GTO thyristor pair and the diode pair are located in the middle of the stack structure and sandwiched by the elements in the other with all the elements stacked in electrical connection. The stack structure is clamped by a pair of clamper members (62, 63).</p>
申请公布号 EP0069971(A1) 申请公布日期 1983.01.19
申请号 EP19820106030 申请日期 1982.07.06
申请人 HITACHI, LTD. 发明人 YAMADA, YUKIO;ITAHANA, HIROSHI;KUWANA, HISASHI
分类号 H01L25/10;H01L25/11;H01L25/18;H02M7/00;H02M7/155;H02M7/521;(IPC1-7):02M1/00;01L25/08;02M7/46 主分类号 H01L25/10
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