| 摘要 |
A pinch-off channel MOS transistor (4) of single layer material can support high voltages because of a substrate well that is not more than five microns deep. With such a shallow well, punchthrough of the drain-well depletion region (30) and the well-substrate depletion region (29), because of decreasing drain voltage relative to the well voltage, is achieved rapidly to provide a combined depletion region. Continued reduction of the drain voltage relative to the well voltage results in expansion of the combined depletion region in the lateral direction and, thus, the combined depletion region creates a broad insulating region which can support a lateral field that can span large horizontal distances and thus support high potential differences of 50 volts or more.
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