| 摘要 |
PURPOSE:To obtain a large laser output by a method wherein, in the case of the laser device having a lateral junction stripe structure, the horizontal angle of emission is symmetrized by flattening the density distribution of the active region in an active layer which is called carrier density distribution in other words. CONSTITUTION:An N type Ga0.65Al0.35As first clad layer 2, a Ga0.9Al0.1As active layer 3, and the second clad layer 4 of the same composition as the layer 1 are formed by lamination on a GaAs substrate 1, and the forbidden band width of the layer 3 is narrowered than that of the layers 2 and 4. Then, a P<+> type region 5 is formed by diffusing P type impurities on a part of the surface of the layer 4 in such a manner that the P type impurities will be entering into the substrate 1, a shallow P type region 6a which comes in contact with the region 5 is provided and this stripe region is used as an active region 10a. Subsequently, a P-side electrode 8 and an N-side electrode 9 are coated on both sides of the region 10a respectively while a part of region 10a is being exposed. Accordingly, as a part having different impurity density is not existed on the region 5, the current which does not contribute to oscillation is reduced, and the output of the title device can be increased. |
