| 摘要 |
PURPOSE:To perform the annealing of nonmetals without changing the concentration and distribution of impurites by the method in which nonmetals are heated instantaneously by spark irradiation from a spark discharge tube having a specific luminous pulse width range. CONSTITUTION:A spark discharge tube lamp whose bulb is filled with a gas composed mainly of a rare gas, e.g., xenon, etc., is controlled its luminous pulse width in the range of 60-900 micron sec to cause light to emit. Nonmetal, e.g., silicon, etc., is heated instantaneously by the luminous energy and thus the annealing of the nonmetal is attained. The instantaneous temperature-rising method is an excellent annealing method capable of removing lattice defect, etc., in silicon, etc., without changing the concentration and distribution of impurities. |
