发明名称 MANUFACTURE OF THICK FILM HYBRID IC
摘要 <p>PURPOSE:To provide reliable and easy resistor trimming for higher density IC's by using the same electrode pattern both as a pattern with which a resistor trimming probe makes contact and a pattern to which parts installation is performed. CONSTITUTION:Electrode patterns 2g, 2h at both ends of resistor R2, electrode patterns 2e, 2f for electronic parts installation, and connecting electrode patterns 2i, 2j are simultaneously printed. Thick film resistors R2-R6 are formed and trimming is applied to R2 by contacting a probe with the electrodes 2e, 2f. Then, the electrode patterns 2i, 2j are cut by a laser. This constitution enables the use of a large parts installation pattern for resistor trimming, making trimming operation reliable and easy. Because of this and the use of the same electrode pattern as a dual purpose IC, density thereof can be made high.</p>
申请公布号 JPS589350(A) 申请公布日期 1983.01.19
申请号 JP19810107026 申请日期 1981.07.10
申请人 HITACHI SEISAKUSHO KK 发明人 ONO KOUICHI
分类号 H01C17/24;H01L21/70;H01L27/01;H05K1/16 主分类号 H01C17/24
代理机构 代理人
主权项
地址