| 摘要 |
PURPOSE:To solve the problems of both the degree of integration and power supply margin and to simplify the control process of threshold voltage, by applying a control signal having a higher potential than a power supply to the gate of an MOS transistor which reduces the power consumption. CONSTITUTION:An enhancement type MOS transistor TRT4 is connected between an output terminal Va and an earth of a boosted voltage generaing circuit 4, and a switching signal PD of a power-down mode is supplied to the gate of the TRT4. This signal PD gives a command for a reduction of power consumption. The higher the gate voltage the smaller the structure of the transistor in the case of the same current. The gate controlling signal of a conventional TRT3 is equal to the level of power supply voltage. The signal B1 of this new circuit is boosted up to a level of voltage higher than the power supply voltage. Thus a TRT3 can be miniaturized. The gate voltage of the TRT3 is boosted, and the power supply voltage is obtained with an increase of the power supply margin. The TRT3 has the same threshold voltage as the TRT1, and as a result, the control of the voltage is simplified. |
