发明名称 Semiconductor laser device
摘要 Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized.
申请公布号 US4369513(A) 申请公布日期 1983.01.18
申请号 US19800204012 申请日期 1980.10.31
申请人 HITACHI, LTD. 发明人 UMEDA, JUN-ICHI;KAJIMURA, TAKASHI
分类号 H01S5/042;H01S5/10;H01S5/40;(IPC1-7):H01S3/19 主分类号 H01S5/042
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