DISPOSITIF DE COMMUTATION A COUCHE SEMI-CONDUCTRICE DE PENTOXYDE DE VANADIUM ET SON PROCEDE DE PREPARATION

摘要

Appts. contains two electrodes and a thin semi-conducting layer of amorphous vanadium pentoxide which has a relative concentration of reducing ions V.4+ of at least 0.04, and a thickness of O.2 to 1.5 um. It is produced by preparing a thixotropic gell of vanadium pentoxide by heating a mass of crystallised vanadium pentoxide to a temperature of at least 790 deg.C and soaking the fused mass obtained in water or by polymerisation of polyvanadic acid. This is dissolved in either water or a mixture of water and acetone to vie a colloidal solution which is then deposited on an insulating substrate and evaporated to give a semiconducting layer of vanadium pentoxide. Finally two gold electrodes are deposited on the semiconducting layer. Devices are used in electronic circuits. The semiconducting layer with a vanadium base is easily produced because it can be deposited at ambient temp.