| 摘要 |
PURPOSE:To enhance precision of a CMOS semiconductor device by a method wherein a uniconductive guard ring is formed as to make the junction edge thereof ending at the main face to come between the junction edge of the high resistance region ending at the main face and the edge part of a pattern for introduction of impurities. CONSTITUTION:The P-well is formed and the P type high resistance region 5 is formed at the same time in an N type silicon substrate 1. N type impurities are introduced to form the guard ring 3. At this time, the guard ring is formed as to make the junction edge x2 ending at the surface of the guard ring 3 to come between the edge x0 of the mask pattern for formation of the region 5 and the junction edge x1, and concentration of impurities of the guard ring 3 is made higher than that of the region 5. |
