| 摘要 |
PURPOSE:To accomplish the increase in luminous efficiency of wavelength band of 1.1-1.5mum, and the improvement of current and output characteristics for the titled element by a method wherein impurities with a small diffusion coefficient are doped on the third layer InP. CONSTITUTION:The first layer N type InP layer 2, the second layer undoped InGaAsP layer 3, and the third layer P type InP layer 4 are formed on the substrate 1 of an N type InP by performing liquid-phase epitaxial growth. When the InP layer is formed, the impurities of small diffusion coefficient are introduced as a P type dopant. As a result, the element of P type carrier density of 1X10<17>cm<2> can be obtained. |
